Via drilling in Silicon

The unique properties of the NCLR laser pulses can offer various solutions for via drilling in semiconductor materials such as silicon. Hole drilling can be required for creating solar cells based on so called Emitter-Wrap-Through (EWT) or Metal Wrap-Through (MWT) principle.

On the left you can see a 1 mm diameter hole drilled in a silicon wafer of 500 µm thickness. On the right a 10 µm hole in a silicon wafer of 220 µm thickness.

Both images show the result of the laser drilling without any post-processing

Excimer laser crystallisation of silicon layers

Attractive for thin film solar cell application.

The 200 ns pulse duration in combination with the high power of Sirius and Eureka UV lasers are suitable for crystallization of thin-films. The amorphous silicon film, 500 nm thick, was laser treated in order to investigate the changes of the structural properties with excimer laser crystallization.

The picture shows a SEM image of a sample surface after irradiation. Experimental results after UV laser crystallization show that the average silicon grain sizes exceed 75 µm, which is an attractive result for solar cells efficiency.